Meta-stability Effects in Organic Based Transistors
نویسندگان
چکیده
Gate bias-induced stress has been investigated on sexithiophene-based ransistors. It was found that both a negative and a positive threshold voltage shift can be induced. Temperature-dependent measurements show that there are two processes involved in the negative threshold voltage shift, one occurring at T 220 K and the other at T 300 K. These two transition temperatures were interpreted in terms of a polaron mechanism associated with defects. The time and the electric field dependence of the threshold voltage were also studied.
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